A New silicon—on—Insulator Structure of Metal—Oxide—Semiconductor Field Effect Transistor to Reduce Self—Heating Effect
参考文献6
-
1Collinge J P 1991 Silicon-on-Insulator Technology: Materials to VLSI (New York: Kluwer).
-
2Charles H et al 1994 IEEE Trans. Electron Devices 41 675.
-
3Apanovich Yet al 1993 IEEE Trans. Electron Devices 40 2094.
-
4Douglas D A and Krishna S 1995 IEEE Trans. Electron on Devices 42 489.
-
5Su L T et al 1994 IEEE Electron Device Lett. 15 374.
-
6Hiroshi I, Jun N and Takao Y 2001 Proc. Electrochem. Soc.(Washington D.C., USA, March 2001) p 27.
-
1New Zune,New Design 微软zune[J].微型计算机,2008(2):94-94.
-
2Rajab Yahyazadeh Zahra Hashempour.Analytical-Numerical Model for the Transconductance of Microwave AIGaN/GaN High Electron Mobility Transistors[J].材料科学与工程（中英文B版）,2011,1(1):121-129.
-
3魏林,李爱珍,张永刚,李耀耀.The Self-Heating Effect of Quantum Cascade Lasers Based on a Spectroscopic Method[J].Chinese Physics Letters,2009,26(8):149-151. 被引量：1
-
4发光器件及应用[J].中国光学,1996(6):3-3.
-
5ZHANG Sheng CHENG Zhiqun LI Jin ZHOU Pengfei XU Shenjun.Design of CMOS Mixer with Complementary Transconductance[J].科技通报,2010,26(2):189-193.
-
6李柏承,张大伟,黄元申,倪争技,庄松林.A new structure of multi-layer phosphor package of white LED with high efficiency[J].Chinese Optics Letters,2010,8(2):221-223. 被引量：4
-
7TianHaiyan,LiXiaolin,YinBo,LouSiyan.A NEW DESIGN METHODOLOGY FOR PRINTED LOG-PERIODIC MONOPOLE ANTENNA[J].Journal of Electronics(China),2012,29(1):171-176. 被引量：4
-
8冯慧,安霞,杨东,谭斐,黄良喜,武唯康,张兴,黄如.基于自热修正的SOI NMOSFETs热载流子注入效应寿命预测方法[J].中国科学：信息科学,2014,44(7):912-919.
-
9Subodh Wairya,Rajendra Kumar Nagaria,Sudarshan Tiwari.New Design Methodologies for High Speed Low-Voltage 1-Bit CMOS Full Adder Circuits[J].Computer Technology and Application,2011,2(3):190-198. 被引量：1
-
10胡盛东,张波,李肇基,罗小蓉.A new structure and its analytical model for the vertical interface electric field of a partial-SOI high voltage device[J].Chinese Physics B,2010,19(3):496-502. 被引量：2
