ZnO薄膜的掺杂及其结型材料的研究进展

DEVELOPMENT OF p-TYPE DOPING AND p-n JUNCTIONS OF ZnO FILM

ZnO薄膜作为一种多用途的半导体材料,一直受到国内外学术界的广泛关注.尤其是自1997年发现ZnO薄膜的室温紫外光发射以来，ZnO薄膜的制备及其光电子特性的研究成为新的研究热点.几年来，研究进展非常迅速，已报道了结型电致发光器件和光电探测器件的初步研究结果.文章结合作者的工作，综述了目前国内外对ZnO薄膜的掺杂以及ZnO异质结和同质p－n结制备方面的研究状况.

ZnO film, as a multi\|use semiconductor material, has long attracted much attention. Since the discovery of the UV luminescence of ZnO films in 1997, their preparation and the investigation of their photo\|electronic properties have become a new hotspot. Recently, results of studies on electroluminescence from junction devices and photoelectronic detectors have been reported. This article summarizes the research on ZnO films, including the investigation of ZnO heterojunctions and homogeneous p\|n junctions.