摘要
采用SEM,TEM和XRD方法研究了MoSi2在1200-1600℃的氧化层微观结构.在1240℃下,氧化层由SiO2和其它氧化物混合而成,致密度较差,1240-1520℃区间氧化层表面存在针状、扇状或羽状的低温石英,氧化层较薄.在1520℃以上,氧化层中含有块状、粒状或蜂巢状的方石英.氧化层致密而均匀.
The microstructure of oxidative layer of MoSi2 at 1200-1600 degreesC was investigated by SEM, TEM and XRD. The surface layer consists of the mixture of SiO2 and other oxides under 1240 degreesC, which has low compactness. There is needlelike, flabelliform or penniform low temperature quartz in the surface layer at 1240-1520 degreesC, and the layer is thin. Above 1520 degreesC the oxidative layer contains mass-like, granular-like or honeycomb cristobalite and is compact, thick and homogeneous, so the oxidate resistance of MoSi2 is enhanced obviously.
出处
《金属学报》
SCIE
EI
CAS
CSCD
北大核心
2003年第2期126-130,共5页
Acta Metallurgica Sinica
基金
国家自然科学基金资助项目50171037
