Cd补偿垂直布里奇曼法生长Cd_(0.9)Zn_(0.1)Te晶体

Growth of Cd_(0.9)Zn_(0.1)Te crystals by Cd compensated vertical bridgman method

采用传统垂直布里奇曼法和Cd补偿垂直布里奇曼法,分别生长出两根尺寸为φ30mm×130mm的Cd0.9Zn0.1Te晶锭。测试了晶体的结晶质量、成分分布、位错腐蚀坑密度(EPD)、红外透过率及电阻率。结果表明,Cd补偿垂直布里奇曼法生长的晶体结晶质量好、成分分布均匀、EPD低、红外透过性能好且电阻率高。这说明Cd补偿垂直布里奇曼法是一种生长高阻值CZT晶体的优良方法。

Two Cd0.9Zn0.1Te ingots of 30mm in diameter and 130mm in length were grown by traditional vertical Bridgman method and Cd compensated vertical Bridgman method respectively. The asgrown crystals were characterized by crystallinity, concentration distribution, EPD, IR transmittance and resistance. It was found that the crystal grown by Cd compensated vertical Bridgman method has higher crystallinity, homogeneous concentration distribution, lower EPD, higher IR transmittance and higher resistance than that grown by vertical Bridgman method. These results indicate that the Cd compensated vertical Bridgman method was a better technology for the preparation of high resistant Cd0.9Zn0.1Te crystals.