摘要
采用氧化铝模板法结合具有高真空背景的低压化学气相沉积技术制备出 Ge纳米线 .在氧化铝模板的背面喷金作为催化剂 ,合成了 Ge纳米线 .采用原子力显微镜、X射线衍射、透射电镜、能量散射谱等手段对 Ge纳米线进行了分析 .Ge纳米线的直径约为 30 nm,长度超过 6 0 0 nm.对 Ge纳米线的生长机理进行了探讨 .
Ge nanowires are synthesized by low pressure chemical vapor deposition (LPCVD) combined with porous alumina template.Gold film is evaporated on the back side of alumina template,and used as a catalyst.The Ge nanowires are characterized by the means of AFM,XRD,TEM and EDX.The Ge nanowires are uniform,about 30nm in diameter and more than 600nm in length.The growth of mechanism of the Ge nanowires is discussed.
基金
国家自然科学基金资助项目~~
关键词
Ge纳米线
氧化铝模板
低压化学气相沉积
Ge nanowires
porous alumina template
low pressure chemical vapor deposition
vapor liquid solid mechanism
