摘要
介绍了离子清洗技术在提高 980nm半导体激光器可靠性方面的应用。外延片在空气中解理后 ,半导体激光器的腔面会吸附上碳和氧等杂质。腔面吸附的氧和碳严重影响了器件的可靠性。本文用GaAs衬底表面模拟半导体激光器的解理腔面 ,并对其进行氩离子清洗 ,俄歇电子能谱 (AES)
The paper introduces the technology of ion irradiation for improving the reliability of 980nm semiconductor lasers.If the wafers are cleaved in air,the facets of laser diodes will be contaminated by impurity such as oxygen and carbon.The impurity on the facets of laser diodes will affect their reliability seriously.The surface of GaAs substrate is treated by Ar ion irradiation and measured by AES simulating the facets of laser diodes.By AES measurements,we know that Ar ion irradiation could eliminate the impurity of oxygen and carbon on surface of GaAs substrate effectively.
出处
《激光杂志》
CAS
CSCD
北大核心
2003年第1期22-23,共2页
Laser Journal
