电镀法制备的CoNiMnP永磁薄膜

Electroplated CoNiMnP Permanent Magnet Film

采用电镀法制备了与微电子CMOS工艺兼容的硅基CoNiMnP垂直各向异性永磁薄膜,并对该薄膜的微结构、组成、磁性能等进行了分析与测试。结果表明,在室温、pH值3～4、电流密度小于10mA/cm2的条件下,能够获得性能良好的垂直各向异性CoNiMnP永磁薄膜,薄膜的组成(质量分数)为:Co 90.32%、Ni 7.83%、Mn 0.74%、P 1.11%,垂直薄膜方向磁性能为:Hc=59.7kA/m,Br=0.53T,(BH)max=11.3kJ/m3;平行薄膜方向磁性能为:Hc=27.8kA/m,Br=0.42T,(BH)max=3.2kJ/m3。

Electroplated CoNiMnP permanent magnet films with vertical magnetic anisotropy were prepared on silicon wafer, which was compatible with CMOS processes. The microstructure, material composition and magnetic performances of the deposited films were tested and analyzed. The results show that high magnetic performance CoNiMnP permanent magnet films with vertical anisotropy could be fabricated with electric current density less than 10mA/cm2 and pH 3～4 at room temperature. The deposited film composition is as follows: Co 90.32wt%, Ni 8.73wt%, Mn 0.74wt%, P 1.11wt%. The magnetic properties are obtained with Hc=59.7kA/m, Br=0.53T, (BH)max=11.3kJ/m3 in vertical direction, and Hc=27.8kA/m, Br=0.42T, (BH)max=3.2kJ/m3 in the lateral direction.