MOS结构的质子辐照效应

THE PROTON RADIATION EFFECT OF MOS STRUCTURE

利用微分电容法和禁带中央电压漂移技术,研究了铝栅MOS结构质子辐照诱发的新生界面陷阱和氧化层陷阱结构。结果表明,质子辐照所诱发的新生界面陷阱和氧化层陷阱随质子能量和剂量的增加而增加。用H^+二级过程模型和计算机模拟定性解释了实验结果。

Using the differential capacitance method and the midgape-votageshift lechnique to study the proton radiation induced interface traps and oxide trapsin the Al-gate MOS structure. The results indicate that the overall density of the ra-diation-induced interface traps and oxide traps increase with proton energy and doses.These experimental rcsults were explained in terms of the two-stage H^+ process andTRIAM-89 computer simulation.