摘要
针对半导瓷敏感元件 ,应用金属半导体欧姆接触原理 ,分析了半导瓷电极欧姆接触的表面吸附层和能带结构 ;应用金属半导体欧姆接触的伏安特性 ,导出了金属半导瓷欧姆接触的导电机理 。
In consideration of semiconductor ceramic sensitive elements, the surface absorption layer and energy band structure of the semiconductor ceramic electrode ohm contact are analyzed by using the principle of metal-semiconductor ohm contact. The conductivity mechanism of metal-semiconductor ceramic contact is derived by using its volt-ampere character, thus it is concluded that the electronic tunneling effect and field emission are the important conductive process of the metal-semiconductor ceramic ohm contact.
出处
《江汉石油学院学报》
CSCD
北大核心
2002年第4期110-111,104,共3页
Journal of Jianghan Petroleum Institute
关键词
半导体陶瓷电极
欧姆接触
金属电极
隧穿效应
场发射
metallic electrode
semiconductor ceramics
ohm contact
tunnelling effect
field emission