期刊文献+

半导体陶瓷电极欧姆接触理论分析

Theoretical Analysis of Ohm-contact of Semiconductor Ceramic Electrode
下载PDF
导出
摘要 针对半导瓷敏感元件 ,应用金属半导体欧姆接触原理 ,分析了半导瓷电极欧姆接触的表面吸附层和能带结构 ;应用金属半导体欧姆接触的伏安特性 ,导出了金属半导瓷欧姆接触的导电机理 。 In consideration of semiconductor ceramic sensitive elements, the surface absorption layer and energy band structure of the semiconductor ceramic electrode ohm contact are analyzed by using the principle of metal-semiconductor ohm contact. The conductivity mechanism of metal-semiconductor ceramic contact is derived by using its volt-ampere character, thus it is concluded that the electronic tunneling effect and field emission are the important conductive process of the metal-semiconductor ceramic ohm contact.
出处 《江汉石油学院学报》 CSCD 北大核心 2002年第4期110-111,104,共3页 Journal of Jianghan Petroleum Institute
关键词 半导体陶瓷电极 欧姆接触 金属电极 隧穿效应 场发射 metallic electrode semiconductor ceramics ohm contact tunnelling effect field emission
  • 引文网络
  • 相关文献

参考文献2

  • 1Seto Y W. The electric properties of polycrystalline silicon films [J]. Appl. J. Phys. , 1975, 46 (12) : 5247-5254.
  • 2Rhodeick E H. Metal-semiconductor contacts [M] . Clarendon.. Clarendon Press, 1978.

相关主题

;
使用帮助 返回顶部