GaN缓冲层上低温生长AlN单晶薄膜

Study on AlN Film Grown on GaN Buffer Layer at Low Temperature

采用电子回旋共振等离子体增强金属有机物化学气相沉积(ECR PEMOCVD)技术,在α Al2O3(0001)(蓝宝石)衬底上,分别以高纯氮气(N2)和三甲基铝(TMAl)为氮源和铝源低温生长氮化铝(AlN)薄膜。利用反射高能电子衍射(RHEED)、原子力显微镜(AFM)和X射线衍射(XRD)等测量样品,研究了AlN缓冲层和氮化镓(GaN)对六方AlN外延层质量的影响,实验表明在GaN缓冲层上能够低温生长出C轴取向的AlN单晶薄膜。

AlN film has been grown on αAl2O3 (0001) substrate by ECRPAMOCVD technique at low temperature using TMAl and highly pure N2 as Al and N sources, respectively. The effects of GaN buffer layer and AlN buffer layer on the quality of AlN epilayer have been investigated through the measurement of RHEED, TEM and XRD. The result shows that C axis oriented AlN single crystal film can be grown on GaN buffer layer at low temperature.