摘要
分析了在ECR MOCVD装置上外延生长GaN单晶薄膜的工艺特点,在此基础上尝试了一种新的氮化方法处理衬底表面,并进行了一系列不同条件下的对比试验,以反射高能电子衍射(RHEED)和X射线衍射(XRD)对实验结果进行检测,发现在清洗的过程中加入一定量的氮可以避免单纯氢清洗对衬底的损伤,并取得了比较好的氮化效果。
The process characteristics of epitaxial growth for GaN single crystal films using ECRMOCVD is analysed, based on which a new method of nitridation has been taken to carry out a series of experiments under different conditions. It is found through RHEED XRD that the damage may be avoided if we add a definite quantity of nitride during the cleaning of the substrate by pure hydrogen and better nitridation effect can be achieved.
出处
《半导体光电》
CAS
CSCD
北大核心
2003年第1期45-47,共3页
Semiconductor Optoelectronics
基金
国家自然科学基金项目(69576003)
863 - 7 1 5-01 1 - 0 0 3 3支持项目
