摘要
介绍了在硅基片上用钽溅射靶溅射沉积和用钽的化合物气相化学沉积钽基膜 (金属钽、碳化钽、氮化钽、硅化钽、氮化硅化钽、氮化碳化钽 )作为集成电路中防止铜向基片硅中扩散的阻挡层 ,介绍了钽溅射靶的技术要求 ,加工方法以及化学气相沉积钽基薄膜的方法。
Forming tantalum based films (tantalum, tantalum nitride, tantalum silicide, tantalum carbide) on Si substrate via both tantalum sputtering and chemical vapor deposition(CVD) as barrier layer in large scale integration circuitry ( LSIC) to prevent copper diffusion into Si layer and specification of tantalum sputtering target and the method of fabrication and CVD process were reviewed.
出处
《稀有金属》
EI
CAS
CSCD
北大核心
2003年第1期28-34,共7页
Chinese Journal of Rare Metals
关键词
钽
阻挡层
钽溅射靶
化学气相沉积
tantalum
barrier layer
tantalum sputtering target
chemical vapor deposit
