磁控溅射法制备二氧化钒薄膜最佳参量的研究

The Study of Optimizing Parameters in Preparing VO 2 Films by Magnetron Sputtered Method

用X射线电子能谱仪 (XPS)对不同条件下用磁控溅射法制备的VO2 薄膜进行测试 ,得到VO2 薄膜内部组成成份的信息 .研究了获得高含量VO2 薄膜的最佳制备参量 .同时还观察到V2 O3、VO2 、V2 O5以接近含量共存的现象 ,这与以前研究所给出的薄膜几乎只由V2 O3、VO2 、V2 O5中的两种组成的结论有所不同 .

VO 2 thin films are prepared by RF magnetron sputtering in different conditions. According to the XPS investigation, composition data of the interior VO 2 thin films are achieved. The optimization parameters have been studied.V 2O 3?VO 2 and V 2O 5 exist at nearly equal constant is observed in the experiment. It is somewhat different with the results given by former bibliography, that the film is composed only by every two of V 2O 3?VO 2 and V 2O 5.