摘要
建立了非线性GaAs光导开关深能级杂质瞬态模型的基本方程 ,获得了与实验现象定性吻合的电流输出 ,给出了平均载流子随时间演化的情况 .分析结果表明 ,在考虑了深能级杂质的俘获、发射和碰撞电离后 ,有可能对非线性光导开关中发生的一系列现象做出解释 ,进一步的仔细分析将对非线性光导开关的设计和制作提供理论指导 .
The equations of transient deep level impurity model of nonlinear photoconductive semiconductor switches are developed. Output current waveform coinciding with experimental result qualitatively is obtained by simulating numerically. The time dependence of average carrier densities is presented. The results indicate that it maybe possible to explain the nonlinear phenomena observed in photoconductive semiconductor switches if the emission, capture of carrier by deep level traps and their impact ionization included. More detailed analysis may help the designs and fabrications of PCSS.
出处
《光子学报》
EI
CAS
CSCD
北大核心
2003年第1期121-123,共3页
Acta Photonica Sinica
基金
国家自然科学基金资助项目 (6 97810 0 2 )
