SiC功率金属-半导体场效应管的陷阱效应模型

Trapping effect modeling for SiC power MESFETs

针对 4H SiC射频大功率MESFET ,建立了一个解析的陷阱效应模型 ,该模型采用简化参数描述方法 ,并结合自热效应分析 ,从理论上完善了SiCMESFET大信号直流I V特性的解析模型 ,且避免了数值方法模拟陷阱效应的巨大计算量 .

An analytical trapping modle, which utilizes concise parameters to describe the impact of deep level traps in the p-bufftr layer on the output characteristics, is proposed for 4H-SiC RF power MESFET. This model is simple in calculations compared,with normally used 2D numerical model. It also takes into account the self-heating effect that plays an important role in saturated region of I-V characteristics. The description of transconductatice degradation, drain conductance decrease and pinch-off voltage dispersion caused by the traps is easily derived by theoretical analysis. The result shows good agreement between simulations and measurements.