摘要
对颗粒碳化硅在温度范围 145 7- 1675K下的氧化性能进行了研究。发现采用沉降曲线法获得的粒度数据遵循对数统计分布 ;
The Oxidation behavior of SiC is a property of essential importance for the use of this material in the high-temperature range.The oxidation behaviour of particulate SiC′ has been studied in the temperature of 1475-1675K in this paper.The particle size date obtained by the sedigraph method has been found to follow the logarithmic statistical distrbution.The relative mass ratio date obtained from the isothermal mass-gain measurements were fitted using a computer simulation to get the best of the rate constant.
出处
《中国陶瓷工业》
CAS
北大核心
2002年第6期30-32,共3页
China Ceramic Industry
