聚甲基苯乙基硅烷光降解行为的研究

BEHAVIOR OF POLY (METHYL PHENETHYL) SILANE PAOTODEGRADATION

聚甲基苯乙基硅烷(PMPES)具有对紫外光极为敏感、耐热性能好、易于工业化的特点,是一种新型高分辨的光致抗蚀剂材料。本文研究了PMPES的紫外光降解行为,其降解规律属无规降解,具有显著的光漂白作用。体系中加入三乙氧基硅烷,可大大加速PMPES的光降解,加入香豆素对PMPES的光降解程度有所抑制,并对其机理作了初步解释。PMPES光降解前后的ESCA谱和IR谱表明,光降解和光氧化同时进行。

PMPES exhibits radiation puite sensitive to UV and excellent thermal stability. It employs as new resist materials in photolithography application. In this paper, behavior of PMPES photode-gration in irradiation of UV was studied. The results indicate that degradation of PMPES is random process and have remarkable bleaching. Addition of triethyloxysilane greatly increases the rate of PMPES degradation and addition of coumarin decrease the rate of PMPES degradation. Before and after irradiation of UV in air ESCA spectra of PMPES show both photodegradation and photooxidation occured.