摘要
自发有序Ｇａ＿（０．５）Ｉｎ＿（０．５）Ｐ合金的拉曼光谱研究李国华，刘振先，韩和相，汪兆平，董建荣（中国科学院半导体研究所，半导体扭晶格国家重点实验室北京１０００８３）（中国科学院半导体研究所，半导体材料科学实验室北京１０００８３））ＲａｍａｎＳｃａ...
Abstract Raman scattering has been measured for three spontaneously or-dered and a disordered Ga_(0.5)In_(0.5)P alloy. The ordered samples have the charac-teristic band－gap energy anomaly（40， 90 and 120 meV lower than that of the disordered allov）． Three peaks have been observed in the Raman spectra， cor-responding to the Gap－like LO（～380 cm^(-1)）， InPlike LO （～360 cm^(-1)）and TO／～330 cm^(-1) ） modes， respectively. The Gap-like LO mode frequencies are 3 cm^f(-1)，6cm^(-1)， and 6 cm^(-1) larger than that of disordered sample for three ordered sample. The polarization properties of the ordered alloys is similar to that of the bulk Ⅲ-Ⅴ semiconductors.
出处
《光散射学报》
1995年第2期124-125,共2页
The Journal of Light Scattering
