Ga－Al－As－Si系统中Si的两性掺杂行为的研究

Study on Behavior of the Amphoteric Doping of Silicon in Ga-Al-As-Si System

对Ｓｉ在电液相外延Ｇａ－Ａｌ－Ａｓ－Ｓｉ系统中的两性掺杂行为进行了研究。提出了一种恒温生长Ｇａ＿（１－ｘ）Ａｌ＿ｘＡｓ：Ｓｉｐ－ｎ结的新方法，对这种ｐ－ｎ结的成因作了定性的解释，并对这种ｐ－ｎ结的电特性加以观察。

The behavior of the amphoteric dopingof silion in the Ga-Al-As-Si system of electricalcurrent-nduced liquid phase epitaxy(CLPE)hasbeen studied.A new method for growing Ga_(1-x)Al_xAs: Si p-n junctiOn at constant temperatue in CLPEequipment has been given. The cause of formation onthis p-n junction has been explained qualitatively.The electrical property of this p-njunction has beenalso examined.