摘要
采用固相法制备得到了掺杂 1% (mol) Gd2 O3的钛酸钡陶瓷 ,并通过 X射线衍射分析和扫描电镜对其结构进行了表征。对其介电常数、介电损耗和室温电阻率进行了测定 ,结果表明 Gd2 O3掺杂 Ba Ti O3陶瓷的介电常数明显增加 ,介电损耗也有所升高 。
Ba Ti O3ceramics doped with Gd2 O3(the additive content was1% m ol) were prepared by solid- phase method,the crystal structure were studied by SEM and XRD,the dielectric constant,dielectric loss and the resis- tivity of Ba Ti O3ceram ics doped with Gd2 O3were also studied,the dielectric constant was increased obviously,the dielectric loss was also increased,the resistivity was decreased obviously.
出处
《稀土》
EI
CAS
CSCD
北大核心
2003年第1期68-69,共2页
Chinese Rare Earths
基金
哈尔滨工业大学校科学研究基金资助项目 (HIT.2 0 0 0 .19)
