摘要
用MEVVA离子源将稀土Nd离子注入到硅基片中 ,可以合成出性能良好的钕硅化合物。用电子显微镜和X射线衍射对样品进行了观测 ,随着退火温度的升高 ,注入层的薄层方块电阻R□ 显著下降 ,注入层形成Nd5Si4 和NdSi两种硅化钕相 ,并逐渐向NdSi相转变。
Neodymium silicides with good properties were synthesized by means of rare-earth Nd ions implantation into silicon with MEVVA ions. The electro-microscope and x-ray diffraction analysis indicated that two kinds of Nd silicides Nd5Si4 and NdSi were formed after rapid thermal anneal (RTA), and gradually transited to NdSi. The sheet resistance R□ decreased abruptly due to the change of RTA temperature.
出处
《南昌大学学报（理科版）》
CAS
北大核心
2002年第3期259-261,共3页
Journal of Nanchang University(Natural Science)
基金
国家自然科学基金资助项目 (6 976 6 0 0 1)
