掺钯硅快恢复二极管V_F～T_(RR)兼容性研究

Study on V_F～T_(RR) Tradeoff of Palladium Doped Fast Recovery Silicon Diode

作者研究了掺Pd硅快恢复二极管的VF～TRR兼容性,得到掺钯硅二极管的VF～TRR兼容性略优于掺铂、掺金二极管的结果;这一结果与目前广泛采用的Baliga理论的预测不相符合,作者对此进行了分析与讨论.根据实验结果,作者认为应用掺钯技术有望制造出性能优良的超快恢复二极管.

The authors studied the VF～TRR tradeoff of palladium doped fast recovery silicon diode, and got the result that the VF～TRR tradeoff of Pddoped diode was slightly superior to that of Ptdoped diode and Audoped diode. Though the result was not in accordance with the prediction of Baliga theory, the authors analyzed it. The use of the Pddoped technique in practice had potential value in research the better ultrafast recovery diode. 