基于InP的HBT的低温、高电流寿命试验
出处
《电子产品可靠性与环境试验》
2003年第1期67-67,共1页
Electronic Product Reliability and Environmental Testing
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6李海鸥,黄伟,邓泽华,邓小芳,刘纪美.Fabrication of 160-nm T-gate metamorphic AlInAs/GaInAs HEMTs on GaAs substrates by metal organic chemical vapour deposition[J].Chinese Physics B,2011,20(6):530-533. 被引量:2
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