摘要
采用峰值功率 1W的国产InGaAs激光二极管作抽运源 ,在室温下实现了光束质量因子M2 <1 4的基横模长脉冲激光振荡。当LD输入电流为 2 15A时 ,使用掺杂浓度为 10at %的Yb∶YAG ,获得了平均功率 1 6 4mW ,单脉冲能量为 16 4 μJ的 1 0 4 9μm激光输出。同时对准三能级结构激光弛豫振荡过程和准连续 (QCW)输出脉冲宽度进行了理论分析 ,得到了跟实验相符的结果。
The properties of a QCW LD pumped Yb∶YAG microchip laser was first presented in detail. At room temperature, 1 64 mW average output power and 16 4 μJ pulse energy at 1 049 μm were obtained with a 10 at % doped Yb∶YAG microchip crystal when diode current was at 2 15 A. The beam quality factor M 2 values were measured to be 1 37 and 1 15 in the vertical and horizontal directions respectively. Theoretical results of laser output pulse width and relaxation oscillation were consistent with experimental values by analysis of quasi three level rate equations of Yb∶YAG microchip laser.
出处
《中国激光》
EI
CAS
CSCD
北大核心
2003年第2期97-100,共4页
Chinese Journal of Lasers
