非均匀阱宽多量子阱155μm高功率超辐射光源

Wide-spectrum High-power 1.55 μm Superluminescent Light Source with Non-uniform Well-thickness Multi-quantum Wells

采用非均匀阱宽多量子阱材料拓宽超辐射器件的输出光谱 ,并利用前期关于倾斜脊形集成超辐射光源的研究成果 ,制得了新型的 1 5 5 μm高功率宽光谱InGaAsP InP集成超辐射光源。发现该器件较均匀阱宽多量子阱器件的输出光谱有很大变化 ,光谱半宽由原来的 2 0～ 30nm ,增加到 4 5～ 6 0nm左右。该器件同样具有较好的抑制激射能力 ,在可测试范围内 ,在没有蒸镀腔面抗反射膜的情况下未见激射模式的出现。在准连续工作条件下 ,器件最大峰值功率已达到 15 0mW以上。

Non-uniform well-thickness multi-quantum wells (NWT-MQWs) materials were adopted to widen the output spectrum of superluminescent device. A novel type of 1.55 μm high-power wide-spectrum InGaAsP/InP integrated superluminescent light source was fabricated based on the tilted ridge-waveguide integrated superluminescent light source. With the uniform well thickness devices, the spectral halfwidth is increases from 20-30 nm to 45-60 nm. The quasi-CW superluminescent power of the device is over 150 mW.