期刊文献+

反应溅射中靶面附近的粒子输运研究 被引量:2

Study on Particle Transport Near the Target Surface in Reactive Sputtering
下载PDF
导出
摘要 列出了各类粒子的产生、输运和它们同靶表面反应的速率方程,并计及高能中性粒子对靶面溅射的剥离速率方程。有关方程耦合后求解溅射速率与气体流量和放电电流的关系。本文强调反应粒子的反应碰撞,论述了从粒子输运出发探讨薄膜生长方法的优点。 The rate equations for particle produce, transport, and reaction with target surface, and sputtering peeling of ion and neutral particles with high energy are established. After these equations coupling up and taking account of other calculations, such as energy distribution functions, macroscopic flow velocity of gas, etc., the relation curves between sputtering rate and inlet flow of reaction gas for different discharge current are obtained, and the advantages of this analysis method are also discussed in the paper.
机构地区 广西工学院
出处 《稀有金属材料与工程》 SCIE EI CAS CSCD 北大核心 2003年第2期99-102,共4页 Rare Metal Materials and Engineering
基金 国家自然科学基金资助项目(19874022) 广西自然科学基金资助项目(9912004)
关键词 反应溅射 薄膜生长 反应粒子输运 生长速率 ceramic thin film particle transport reactive sputtering
  • 相关文献

参考文献3

  • 1[1]Berg S, Larsson T, Nender C, Blom H O. Predicting Thin-filmStoichiometry in Reactive Sputtering [J]. J Appl Phys, 1988, 63(3): 887 ~ 891
  • 2[2]Schiller S, Heisig U, Korndorter CHR et al. The Effect of Target Surface Coupling on Reactive Direct Current Magnetron Suputtering [J]. Surface and Coating Technology, 1989, 39/40:549 ~ 564
  • 3[3]Wang Jingyi, Chen Wei, Wang Yu, Zhao Ning, He Xiaoming. Criterion Analysis on Nonpoisoning of the Target Surface [J]. J Appl Phys, 1993, 73(5): 2 518 ~2 523

同被引文献18

  • 1赵双群,董建新,张麦仓,谢锡善.新型镍基高温合金在950℃和1000℃的氧化行为[J].稀有金属材料与工程,2005,34(2):208-211. 被引量:66
  • 2滕浩,尹志民,朱远志,黄继武,张保胜.Ni76Cr19AlTi合金的高温氧化行为[J].中国有色金属学报,2006,16(5):894-898. 被引量:7
  • 3Mengucci P,Barucca G,Caricato A P,et al.Effects ofannealing on the microstructure of yttria-stabilised zirconithinfilms deposited by laser ablation[J].Thin Solid Films,2005,478(1-2):125-131.
  • 4Koski K,H¨ols¨a J,Juliet P.Properties of zirconium oxidethin films deposited by pulsed reactive magnetron sputtering[J].Surface and Coatings Technology,1999,120-121(1):303-312.
  • 5Levichkova M,Mankov V,Starbov N,et al.Structure andproperties of nanosized electron beam deposited zirconia thinfilms[J].Surface and Coatings Technology,2001,141(1):70-77.
  • 6Delgado J C,Sánchez F,Aguiar R,et al.ArF and KrFexcimer laser deposition of yttria-stabilized zirconia on Si(111)[J].Appl.Phys.Lett.,1996,68(8):1048-1050.
  • 7Matsuoka M,Lsotani S,Miyake S,et al.Influence of ionenergy and arrival rate on x-ray crystallographic properties ofthin ZrOx films prepared on Si(111)substrate by ion-beamassisted deposition[J].J.Appl.Phys.,2000,88(6):3773-3775.
  • 8Jeon T S,White J M,Kwong D L.Thermal stability of ultrathin ZrO2 films prepared by chemical vapor deposition on Si(100)[J].Appl.Phys.Lett.,2001,78(3):368-370.
  • 9Boulouz M,Tcheliebou F,Boyer A.Electrical and opticalproperties of magnetron-sputtered Y2O3 stabilized ZrO2 thinfilms[J].Journal of the European Ceramic Society,1997,17(14):1741-1748.
  • 10Tcheliebou F,Boulouz M,Boyer A.Electrical behavior ofthin ZrO2 films containing some ceramic oxides[J].Mater.Sci.Eng.,1996,B38(1-2):90-95.

引证文献2

二级引证文献3

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部