摘要
The solvo―thermal technique is used for the synthesis of [Mn(en)_3]Te_4 (I).The crystal structure has been determined by single crystal X―ray diffraction techniques. Thecrystal belongs to the monoclinic, space group p2_1/c with unit cell:a = 0. 846 1(1), b=1.5653(2),c=1.426 9(2) nm, α = 90°, β=91. 37(1) (3)°, γ=90°, V=1. 889 3(4) nm^3, and Z=4. The resultsshow that the structure contains a linear chain Zintl anion, [Te_4 ]^(2-) and a complex cation,[Mn(en)_3l^(2+). Optical studies have been performed on the powder sample of I, suggesting that thecompound is a semiconductor with a band gap of 0. 73 eV. The semiconductor properties for MnQ_2(Q=S, Se, Te) and [Mn(en)_3]Te_4 have been discussed by molecular orbital theory.
The solvo-thermal technique is used for the synthesis of Te 4 (I).The crystal structure has been determined by single crystal X-ray diffraction techniques.The crystal belongs to the monoclinic, space group p 2 1/ c with unit cell: a =0.846 1(1), b =1.565 3(2), c =1.426 9(2) nm, α =90°, β =91.37(1) (3)°, γ =90°, V =1.889 3(4) nm 3,and Z =4.The results show that the structure contains a linear chain Zintl anion, 2- and a complex cation, 2+ . Optical studies have been performed on the powder sample of I, suggesting that the compound is a semiconductor with a band gap of 0.73 eV. The semiconductor properties for MnQ 2(Q=S,Se,Te) and Te 4 have been discussed by molecular orbital theory.
基金
FujanEducationCommittee (JA0 0 1 89andJA0 0 1 92 )
FujianExaminationFoundation(JC2 0 0 0 2 8)
