ZnO-Si不同退火条件对生长ZnSe薄膜的影响

Effect of Different Annealing Conditions of ZnO-Si on the Growth of ZnSe

研究了作为缓冲层的ZnO薄膜在不同的退火时间、退火温度下退火对Si衬底上生长ZnSe膜质量的影响。当溅射有ZnO膜的Si(111)衬底的退火条件变化时 ,从X射线衍射谱 (XRD)和光致发光谱 (PL)中可见 ,ZnSe(111)膜的晶体质量有较大的变化。变温的PL谱表明 ,Si衬底上生长的具有ZnO缓冲层的ZnSe膜的近带边发射峰起源于自由激子发射。

ZnSe epilayers were grown on Si(111)substrates by low-pressure metalorganic chemical vapor deposition(MOCVD) with ZnO as a buffer layer. ZnO films were prepared by radio frequency(RF) magnetron sputter deposition technique. X-ray diffraction measurements showed that ZnSe film grown on ZnO-Si(111) substrates were epitaxial films with strong (111) preferential orientation. It is found from X-ray diffraction that the longer time annealing of ZnO films, the better crystallization of ZnSe films were. Photoluminescence (PL) showed that with the higher annealing temperature of ZnO buffer layer, the better ZnSe films also. The photoluminescence (PL) showed a strong and dominant peak emission at near-band-edge emission about 450nm,which was ascribed to free exciton emission. Above results indicated that quality of ZnSe films grown on Si(111) substrates were improved by using ZnO as a buffer layer.