摘要
It is increasingly crucial for flexible electronics to efficiently and reliably peel large-area, ultra-thin flexible films off from rigid substrate serving as substrates of flexible electronics device, especially in industrial production. This paper experimentally investigated the mechanism and technologic characteristics of laser lift-off(LLO) process of ultra-thin(～ 2 μm) polyimide(PI)film. It was found increasingly difficult to obtain desirable ultra-thin PI film by LLO with the decrease of the film thickness. The optimal process parameters were achieved considering laser fluence and accumulated irradiation times(AIT), which were found to be strongly correlative to the thickness of PI film. The process mechanism of LLO of PI film was disclosed that laser ablation of interfacial PI will result in the formation of gas products between the PI and glass substrate, enabling the change of interface microstructures to reduce the interface bond strength. The amount of gas products mainly determines the result of LLO process for ultra-thin PI film, from residual adhesion to wrinkles or cracking. The strategy of multi-scanning based on multiple irradiations of low-energy laser pulses was presented to effectively achieve a reliable LLO process of ultra-thin PI film. This study provides an attractive route to optimize the LLO process for large-scale production of ultra-thin flexible electronics.
It is increasingly crucial for flexible electronics to efficiently and reliably peel large-area, ultra-thin flexible films off from rigid substrate serving as substrates of flexible electronics device, especially in industrial production. This paper experimentally investigated the mechanism and technologic characteristics of laser lift-off(LLO) process of ultra-thin(～ 2 μm) polyimide(PI)film. It was found increasingly difficult to obtain desirable ultra-thin PI film by LLO with the decrease of the film thickness. The optimal process parameters were achieved considering laser fluence and accumulated irradiation times(AIT), which were found to be strongly correlative to the thickness of PI film. The process mechanism of LLO of PI film was disclosed that laser ablation of interfacial PI will result in the formation of gas products between the PI and glass substrate, enabling the change of interface microstructures to reduce the interface bond strength. The amount of gas products mainly determines the result of LLO process for ultra-thin PI film, from residual adhesion to wrinkles or cracking. The strategy of multi-scanning based on multiple irradiations of low-energy laser pulses was presented to effectively achieve a reliable LLO process of ultra-thin PI film. This study provides an attractive route to optimize the LLO process for large-scale production of ultra-thin flexible electronics.
基金
the National Natural Science Foundation of China(Grant Nos.51635007&51705180)
Hubei Province Technology Innovation Special Projects(2017AAA002)
