多值忆阻器的写入方式研究

Methods of Programming Memristor Devices for Multi-Level Resistance Storage

通过改变忆阻器在SET过程中的限制电流或在RESET过程中的电压边界,是实现多值存储的常用方法.而针对某一种方法,又存在多种不同的写入方式.针对在SET过程中通过改变限制电流大小而实现多值的方法,提出了两种不同的写入方式,为其命名为"先判断后写入"和"先擦除后写入".分别使用两种方式对制备的Au/TiO2/Au器件测试发现,"先判断后写入"的方式由于减小了操作过程中的RESET次数而比"先擦除后写入"的方式具有更明显的阻值窗口和更好的低阻值的均一性.

The common way to achieve multi-level resistance storage of memristor is changing the compliance current in SET process or shifting the boundary of the voltage in RESET process.There are many programming methods for one way.This paper put forward to two different programming methods to achieve the multi-level resistance storage of a memristor by changing the compliance current in SET process.They are named as'measuring before writing'and'erasing before writing'.Comparing the two methods performed on Au/TiO2/Au devices,'measuring before writing'has much better resistance uniformity in cycles because of less erasing operations in RESET process.