开管扩Ga模型的初步建立

Initinal Establishment of the Module of Open-tube Ga Diffusion

依照二次离子质谱(SIMS)、扩散电阻(SRP)和原子力显微镜(AFM)等分析手段,首次阐述了P型杂质Ga由SiO_2膜的吸收输运和SiO_2-Si内界面上的分凝效应两者的统一,完成硅中可控制掺杂的全过程;并揭示了其中SiO_2薄层的表面效应及Si的体内效应;初步建立起SiO_2/Si系下开管扩散Ga的模型。

Relying on the analytical means of SIMS, SRP and AFM, theaccordance of the absorption transport of P-type impurity Gallium in SiO_2 thinfilm and the segregation effect in the intemal interface of SiO_2/Si system waselucidated. The work of controllable doping of Ga in silicon substrate is fin-ished. Finally the surface effect and bulk effect in SiO_2 thin film, and initiallyset up the module of open-tube Ga diffusion in SiO_2/Si interface are revealed.