摘要
采用开管方式和SiO_2/Si系统,实现了P型杂质Ca在硅中的可控制掺杂。借助二次离子质谱(SIMS)和扩展电阻(SRP)分析方法,对已掺Ga的杂质硅,在二次氧化过程中产生的分凝效应进行了系统研究,首次得出Ga分凝的规律性,导出了Ca在SiO_2-Si内界面Si一侧最低浓度值随时间变化的表达式。为全面理解Ga的扩散特性和建立开管扩Ga模型奠定了基础。
Controllable dopant of P-type impurity Ga in Si can be real-ized by open-tube mode and SiO_2/Si system. The segregation effect of silicondoped Ga in the process of the second oxygenation was systemically investigat-ed by SIMS and SRP. The rules of segregation of Ga and the equations of thelowest concentration value of Ga with time at near SiO_2-Si interface are ob-tained for the first time. It has settled the base to completely understand thediffusion of Ga and create the mode of open-tube Ca-diffusion.
出处
《科学技术与工程》
2003年第1期71-74,共4页
Science Technology and Engineering
基金
国家自然科学基金(69976019)
山东省自然科学基金(Y99G01)
