AlSb过渡层在生长InAsSb材料中作用的TEM观察

TEM Observation of the Effect of AISb Buffer Layer on the Growth of InAsSb

用TEM观察了InAsSb/A1Sb/GaAs的结构,分析了AlSb过渡层在InAsSb材料生长中的作用,观察到AlSb内位错沿AlSb/GaAs界面垂直延伸约0.25μm。

The structure of TnAsSb/AlSb/GaAs has been surveyed by transmission electron microscopy (TRM).We anslyzed the effect of AlSb buffe layer in.growing the InAsSb material.It has been observed that the dislocations in AlSb lie approximately perpendicular to the direction of the interface of AlSb/GaAs and extend about 0.25um.