期刊文献+

PTC薄膜的射频溅射制备与性能 被引量:2

preparation and properties of rf-Sputter-Deposited Positive Temperature Coefficient Thin-Films Thermistors
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摘要 用射频溅射法制备出了PTC-BaTiO_3薄膜,基片为Al_2O_3和石英玻璃,基片温度为400~500℃,溅射气氛为纯氧气。试验结果表明不经后续热处理薄膜即具有PTC效应。测试了薄膜的阻温特性、化学组成、厚度及沉积方式。 PTC-BaTiO_3 films were prepared onto Al_2O_3 or SiO_2 by rf-Sputter-Depositing at about 400~500℃ and in pure oxygen. It is not mandatory that all films be heat-treated after being Sputtered, Resistance-Temperature characteristics, chemical composition, thickness and deposition pattern of these films were measured.
出处 《功能材料》 EI CAS CSCD 1992年第4期221-224,共4页 Journal of Functional Materials
基金 中科院上海冶金所离子束开放研究室资助
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同被引文献39

  • 1徐国跃.(Ba-Sr)TiO_3基PTC陶瓷材料第二相结晶对半导化性能的影响[J].无机材料学报,1989,4(1):33-40. 被引量:3
  • 2祝炳和.PTC陶瓷最近的发展和问题[J].家用电器科技,1996(2):7-9. 被引量:1
  • 3Min-Jong Song;Choon-Bae Park.Phase change and electrical properties of thin films BaTiO3 system made by rf/dc magnetron sputtering[C],1997.
  • 4Mendelsohn L I;Orth E D.Preparation and Properties of Positive Temperature Coefficient Thin- Film Thermistors,1966.
  • 5M Nagai;H Yanagida.Preparation of Semiconducting Barium Titanate Film with Positive Temperature Coefficient of Resistivity,1976(03).
  • 6陈光增.PTC热敏半导体的应用[J]物理,1988.
  • 7Makoto Kuwabara.Positive Temperature Coefficient of Resistivity in Thick Films of Semiconducting Barium Titanate,1975(04).
  • 8周东祥;龚树萍.PTC材料及应用,1989.
  • 9Haymanpw;Damrw;Klasensha.查看详情.
  • 10Yuichi Sato;Toshiaki Kawamura;Susumu Sato.A Method of Preparing Thin-Film Micro- PTC Thermistors Based on BaTiO3 Using YAG-Laser Irradiation,2002.

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