GaAs热氧化自生氧化膜掩蔽Zn扩散的研究

A STUDY ON THERMAL NATIVE OXIDE FILMS MASK FOR ZINC DIFFUSION IN GALLIUM ARSENIDE

本文介绍利用闭管热氧化法生长GaAs自生氧化膜掩蔽Zn扩散的研究。采用ZnAs_2作为扩散源,源区温度为610℃,样品在650℃下进行扩散,使用显微镜和染色的方法进行了结深的测量,其实验结果表明这种自生氧化膜具有掩蔽杂质Zn扩散的性能,并用标准的平面工艺,以自生氧化物作掩蔽膜,试制了变容二极管。

The paper reports a study on the native oxide films of GaAs grown by thermal oxidation in the closed tube as mask against Zinc diffusion. These samples were diffused at 650℃ in a closed system using a Zinc source (ZnAs_2+GaAs)at 610℃. Diffusion depths were measured by using microscope and stain procedure, and the results indicated that the native oxide films have a behaviour of masking against Zinc impurity diffusion. As the native oxide films mask against impurity, the varactor diode is fabricated by utilizing the standard planar process. We think it's really worth trying the thin film for fabrication of GaAs devices.