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溅射功率对玉米蛋白膜基底上制备氧化锌(ZnO)薄膜性质的影响 被引量:1

Effects of sputtering power on properties of zinc oxide (ZnO) thin films prepared on zein film substrate
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摘要 室温下采用射频磁控溅射方法在蛋白质基底上沉积了氧化锌(ZnO)薄膜,研究了溅射功率对ZnO薄膜表面形貌和光学性能的影响.X射线衍射测试结果表明,所制备的薄膜均为纤锌矿结构,其取向以(0002)面择优生长为主.薄膜的结晶度和表面形貌与溅射功率密切相关,同时,溅射功率对薄膜的微观结构和光学性能有很大的影响.光学吸收测试结果表明,在玉米蛋白基底上制备的ZnO薄膜在380 nm处具有陡峭的吸收边,在不同溅射功率条件下制备的薄膜禁带宽度均在3.26 eV附近.此外,本文还研究了蛋白质基底上制备ZnO薄膜的光致发光谱. Zinc oxide(ZnO) thin films were deposited on the protein substrate by the radio frequency magnetron sputtering at room temperature.The effects of sputtering power on the structure and optical properties of ZnO thin films were investigated.X-ray diffraction test results show that the prepared films are all wurtzite structures,and their orientation is dominated by(0002) plane growth.The crystallinity and surface morphology of the film are closely related to the sputtering power.At the same time,the sputtering power has a great influence on the microstructure and optical properties of the film.The optical absorption results show that the ZnO film prepared on the zein substrate has a steep absorption edge at 380 nm,and the band gap of the films prepared under different sputtering power conditions is around 3.26 eV.In addition,the photoluminescence spectra of ZnO thin films prepared on protein substrates were also studied.
作者 雷蕾 王超 杨帆 LEI Lei;WANG Chao;YANG Fan(School of electrical and computer engineering,Jilin Jianzhu university,Changchun 130118,China)
出处 《吉林建筑大学学报》 2019年第1期77-81,共5页 Journal of Jilin Jianzhu University
基金 吉林省科技厅项目(20170101111JC) 吉林省教育厅项目(JJKH20180590KJ)
关键词 氧化锌(ZnO)薄膜 玉米蛋白膜 磁控溅射 zinc oxide(ZnO)thin film corn protein film magnetron sputtering
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  • 1Jebreel M K, Martin E K. Optical properties of a-HfO2 thin films [J]. Surface & Coatings Technology, 2006,201: 3530-3535.
  • 2A1-Kuhaili M F. Optical properties of hafnium oxide thin films and their application in energy-efficient windows [J]. Optical Materials, 2004, 27:383-387.
  • 3Khoshman J M, Khan A, Kordesch M E. Amorphous hafnium oxide thin films for antireflection optical coatings [J]. Surface & Coatings Technology, 2008, 202: 2500-2502.
  • 4Robert C, Steve F, Gary E Let al. Reactive evaporation of low-defect density hafnia[J]. Applied Optics, 1993, 32 (28) : 5567-5574.
  • 5Wilk G D, Wallace R M, Anthony J M. Hafnium and zirconium silicates for advanced gate dielectrics [J]. Journal of Applied Physics, 2000, 87:484-492.
  • 6He G, Zhu L Q, Liu Met al. Optical and electrical properties of plasma-oxidation derived HfO2 gate dielectric films [J]. Applied Surface Science, 2007, 253: 3413-3418.
  • 7Dhar S, Ramachandra Rao M S, Ogale S B et al. Growth of highly oriented HfO2 thin films of monoclinic phase on yttrium-stabilized ZrO2 and Si substrates by pulsed-laser deposition [J]. Applied Physics Letters, 2005, 87:241504.
  • 8Nishide T, Honda S, Matsuura Met al. Surface, structural and optical properties of sol-gel derived Hf02 films [J]. Thin Solid Films, 2000, 371:61-65.
  • 9Pereira L, Barquinha P, Fortunato E et al. InflUence of oxygen/argon ratio on the properties of sputtered hafnium oxide [J]. Materials Science and Engineering B, 2005, 118 : 210-213.
  • 10Cho Y J, Nguyen N V, Richter C Aet al. Spectroscopic ellipsometry characterization of high-k dielectric HfO2 thin films and the high-temperature annealing effects on their optical properties [J]. Applied Physics Letters, 2002, 80:1249-1251.

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