超导Nb膜表面减反膜技术研究

Study on Antireflective Layer above Superconducting Nb Films

针对单光子探测芯片中超导Nb膜减反的问题,研究了磁控溅射Nb膜折射率光谱特性随Nb膜厚度变化的规律,同时研究了化学气相沉积法制备的Si O2和Si Nx介质膜的折射率光谱特性。为降低超导Nb膜对633 nm光的反射比,在Nb膜表面设计和制备了Si O2和Si Nx减反膜。测试结果表明:Si O2和Si Nx使反射比明显减小,计算结果验证了这一趋势。

An antireflective layer should be fabricated on the surface of Nb film which was used as the photon energy detection unit in the single photon standard. The spectral refractive index characteristics of Nb films with different thickness made by a magnetron sputter system,Si O2 and Si Nxfilms made by a plasma enhanced chemical vapor deposition system were studied. To reduce the reflection ratio of the superconducting Nb film at 633 nm,the structure of the Si O2/Nb and Si Nx/Nb structure were designed and fabricated. The reflectivity was effectively reduced,which was verified by the results of the calculation.