摘要
在光学系统中,SOI(绝缘体上的半导体)上制备集成的MMI(多模干涉)型光耦合器已成为一种愈来愈引人注目的无源器件.由于Si和SiO2 之间具有大的折射率差,在SOI波导中可以采用SiO2 薄膜( <1.0 μm)作限制层,这与超大规模集成电路工艺相兼容.描述了采用SOI技术制备集成的MMI型光耦合器和光开关的设计和制造结果.业已证实,2× 2MMI MZI(多模干涉 麦赫 曾德干涉)型热光开关的开关时间小于 2 0 μs.
Integrated multimode interference (MMI) coupler based on silicon on insulator (SOI) has been becoming a kind of more and more attractive device in optical systems. SiO 2 thin cladding layers (<1.0 μm) can be usedin SOI waveguide due to the large index step between Si and SiO 2 , making them compatible with VLSI technology. The design and fabrication of MMI optical couplers and optical switches in SOI technology are presented in the paper. We demonstrated the switching time of 2×2 MMI MZI thermo optical switch is less than 20 μs.
出处
《中国科学院研究生院学报》
CAS
CSCD
2003年第1期1-6,共6页
Journal of the Graduate School of the Chinese Academy of Sciences
基金
supportedbyNationalMinistryofScienceandTechnology(G2 0 0 0 0 3 666)andtheNationalSeienceFoundationofChina(698962 60and69990 5 40 )