一步批量制备氮掺杂石墨烯量子点

One-step preparation of nitrogen-doped graphene quatum dots in large scale

因为其独特的量子局域效应,氮掺杂的石墨烯量子点在光电器件的应用上有着良好的前景。由于传统的制备方法中,石墨烯量子点的产率通常不足百分之一,进行氮掺杂的时候会出现进一步损耗,极大限制了其应用。本文提供了一种一步制备氮掺杂石墨烯量子点的方法,而且产率能达到百分之三十以上,将会对促进它在光电领域的实际应用。

Nitrogen-doped graphene quatum dots(N-GQDs) has a promising prospect in opto-electronics due to its unique quantum confinement effects. Traditional methods to prepare N-GQDs usually face the problems of low yield and mass loss during N doping. Here, we proposed a one-step method to prepare N-GQDs, and the yield could be as high as 30%, thus accelerating its application in opto-electronic fields.