一种通过CdS薄层增强电子注入的有机电致发光器件

Organic electroluminescent device by thin layer Cd S enhanced electron injection

制备结构为ITO/Mo O3(7nm)/NPB(40nm)/MCP:Fir6(30nm:8%)/MCP:Ir(piq)acac(3nm:1%)/Bphen(40nm)/Cd S(x nm)/Li F(0.5nm)/Al(100nm)的有机电致发光器件。在常温下研究了Cd S薄层对器件发光性能的影响。相同电压下,具有Cd S薄层结构的器件电流密度明显提高,最大电流效率为14.81 cd/A(6V),最大亮度为8947 cd/m2,对应器件效率为3.93 cd/A。

Organic light-emitting devices ITO/MoO_3(7nm)/NPB(40nm)/MCP:Fir6(30nm:8%)/MCP:Ir(piq)acac(3nm:1%)/Bphen(40nm)/Cd S( x nm)/Li F(0.5nm)/Al(100nm) were prepared, study the effect of Cd S thin layer on the luminescent properties of the device at room temperature. Under the same voltage, the current density of the device with Cd S thin layer structure is obviously improved, the maximum current efficiency is 14.81 cd/A(6V), the maximum brightness is about 8947 cd/m^2, and the corresponding efficiency is 3.93 cd/A.