a-Si:H薄膜太阳电池最佳i层厚度的分析与计算

ANALYSIS AND CALCULATION OF THE OPTIMUMi-LAYER THICKNESS OF a-Si:H FILM SOLAR CELLS

用自洽法计算了p i n型a-Si:H薄膜太阳电池中p i和i n两个分立势垒区中的电荷密度分布ρ(x)、电场分布ε(x)和耗尽层厚度XD.减少i层厚度使两个分立势垒区部分重叠,用电场叠加原理计算耗尽层中的电场分布,在此基础上,根据光生载流子的全收集条件Lpmin=μpτpεmin,计算出a-Si:H薄膜太阳电池的最佳i层厚度Xb.

By using selfconsistent method,the pi and in barrier of the pin model a-Si:the charge density ρ(x),electric field ε(x) and the depletion layer thickness XD in the two separated regions of H film solar cell were calculated.With decreasing i-layer thickness and overlapping them partly,the electric field of the depletion layer was calculated by using electric field overlapping principle.On the basis of which,according to all collection conditions of light producing current Lpmin=μpτp?εmin,the optimum i-layer thickness XD of a-Si:H film solar cells was calculated.