二维二元碳化硅纳米结构的等离激元激发

Plasmon Excitations in Two-dimensional Binary Silicon Carbide Nanostructures

基于含时密度泛函理论,研究两种构型的二维二元碳化硅(SiC)纳米结构的等离激元激发.SiC纳米结构有两个等离激元共振带.由于键长的改变,相对于硅烯纳米结构和石墨烯纳米结构,SiC纳米结构的两个等离激元共振带分别发生蓝移和红移.一种SiC纳米结构的等离激元共振激发依赖于边界的构型和纳米结构形貌;另一种SiC纳米结构的等离激元共振激发对于边界构型和纳米结构形貌的依赖性降低.沿不同方向激发时,等离激元共振特性基本相同.

Plasmon excitations in two-dimensional binary silicon carbide(SiC)nanostructures are investigated with time-dependent density functional theory.SiC nanostructures have two plasmon resonance bands.Compared with silicene nanostructures and graphene nanostructures,due to change of bond length,two plasmon resonance bands of SiC nanostructures are blue-shifted and red-shifted,respectively.Plasmon resonance excitations of one kind SiC nanostructures depend on edge configuration and nanostructure morphology.However,for another kind of Si C nanostructure,dependence on edge configuration and nanostructure morphology decreases.Plasmon resonance properties of this kind SiC nanostructure are basically the same for impulse excitation polarized in different directions.