摘要
The work is mainly to study the thermal stability including the phase stability, microstructure and tribo-mechanical properties of the AlB_2-type WB_2 and W–B–N(5.6 at.% N) films annealed in vacuum at various temperatures, which are deposited on Si and GY8 substrates by magnetron sputtering. For the WB_2 and W–B–N films deposited on Si wafers, as the annealing temperature increases from 700 to 1000 °C, a-WB(700 °C) and Mo_2B_5-type WB_2(1000 °C) are successively observed in the AlB_2-type WB_2 films, which show many cracks at the temperature ≥ 800 °C resulting in the performance failure; by contrast, only slight α-WB is observed at 1000 °C in the W–B–N films due to the stabilization eff ect of a-BN phase, and the hardness increases to 34.1 GPa fi rst due to the improved crystallinity and then decreases to 31.5 GPa ascribed to the formation of α-WB. For the WB_2 and the W–B–N films deposited on WC–Co substrates, both the WB_2 and W–B–N films react with the YG8(WC–Co) substrates leading to the formation of CoWB, CoW_2B_2 and CoW_3B_3 with the annealing temperature increasing to 900 °C; a large number of linear cracks occur on the surface of these two films annealed at ≥ 800 °C leading to the fi lm failure; after vacuum annealing at 700 °C, the friction performance of the W–B–N films is higher than that of the deposited W–B–N films, while the wear resistance of the WB_2 films shows a slight decrease compared with that of the deposited WB_2 films.
The work is mainly to study the thermal stability including the phase stability, microstructure and tribo-mechanical properties of the AlB_2-type WB_2 and W–B–N(5.6 at.% N) films annealed in vacuum at various temperatures, which are deposited on Si and GY8 substrates by magnetron sputtering. For the WB_2 and W–B–N films deposited on Si wafers, as the annealing temperature increases from 700 to 1000 °C, a-WB(700 °C) and Mo_2B_5-type WB_2(1000 °C) are successively observed in the AlB_2-type WB_2 films, which show many cracks at the temperature ≥ 800 °C resulting in the performance failure; by contrast, only slight α-WB is observed at 1000 °C in the W–B–N films due to the stabilization eff ect of a-BN phase, and the hardness increases to 34.1 GPa fi rst due to the improved crystallinity and then decreases to 31.5 GPa ascribed to the formation of α-WB. For the WB_2 and the W–B–N films deposited on WC–Co substrates, both the WB_2 and W–B–N films react with the YG8(WC–Co) substrates leading to the formation of CoWB, CoW_2B_2 and CoW_3B_3 with the annealing temperature increasing to 900 °C; a large number of linear cracks occur on the surface of these two films annealed at ≥ 800 °C leading to the fi lm failure; after vacuum annealing at 700 °C, the friction performance of the W–B–N films is higher than that of the deposited W–B–N films, while the wear resistance of the WB_2 films shows a slight decrease compared with that of the deposited WB_2 films.
基金
supported by the National Natural Science Foundation of China (Nos. 51701157 and 51505378)
the Natural Science Foundation of Shaanxi Province of China (No. 2017JQ5031)
