摘要
随着汽车技术的发展,低电压、大电流的MOSFET应用逐步增多。电机、LED大灯控制器等设备中功率开关器件能耗尤为突出,随之产生的热量使功率器件晶体发热、结温升高,热设计已经成为汽车电子设计比较重要的一部分。本文设计了汽车功率MOSFET功耗与PCB热阻计算的方法,并进行了理论论分析和实验验证,可以为国内汽车部件自主设计厂商提供数据的支持和方法的借鉴。
With the development of automotive technology, the application of low-voltage, high-current MOSFETs has gradually increased. The power consumption of power switching devices is particularly prominent in motors, LED headlamp controllers and other devices. The heat generated by the devices causes the crystals of power devices to heat up and the junction temperature to rise. Thermal design has become an important part of automotive electronics design. In this paper, the power dissipation and PCB thermal resistance calculation methods for automotive power MOSFETs are designed. Theoretical analysis and experimental verification are carried out. This can provide data support and method reference for independent automotive component designers in China.
出处
《机械设计》
CSCD
北大核心
2018年第S1期40-43,共4页
Journal of Machine Design
关键词
MOSFET
功耗
热阻
散耗功率
MOSFET
power dissipation
thermal resistance
dissipation power
