METALLIC PHASE TRANSITIONS IN GaP, Si AND Ge AT HIGH PRESSURE AND METHOD OF THEIR DETERMINATION

METALLIC PHASE TRANSITIONS IN GaP, Si AND Ge AT HIGH PRESSURE AND METHOD OF THEIR DETERMINATION

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摘要 Ⅰ. INTRODUCTION In recent years, there has been considerable interest in semiconductor-t0-metal transitions in group Ⅳ elements and Ⅲ-Ⅳ compounds at high pressure. In 1973, Van Vechten calculated the pressure-temperature phase diagrams of group Ⅳ elements and Ⅲ-Ⅳ compounds according to the quantum dielectric theory of electronegativity

作者鲍忠兴张芝婷俞汀南

机构地区 Institute of Physics

出处《Chinese Science Bulletin》 SCIE EI CAS 1985年第8期1019-1023,共5页

关键词 dielectric diamond TRANSITIONS ADJUST ANVIL VISIBLE ORDERS PURITY transparent faster

分类号 O6 [理学—化学]

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Chinese Science Bulletin

1985年第8期

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METALLIC PHASE TRANSITIONS IN GaP, Si AND Ge AT HIGH PRESSURE AND METHOD OF THEIR DETERMINATION

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