A NEW METHOD OF STRUCTURALLY STUDYING MULTILAYER AMORPHOUS SILICON-ELECTRON MICROSCOPY

Ⅰ. INTRODUCTION Ultrathin film consisting of amorphous hydrogenated silicon (a-Si: H) and silicon nitride (a-SiN_x:H) alternating layers is a kind of two dimensional semiconductors which are interesting in physics. What is more interesting is that while a-Si:H layer is thin enough, an increase in the optical gap can be observed. Moreover, space charge