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STUDIES ON STRESS CHANGES WITH ANNEALING TEMPERATURE FOR AMORPHOUS SEMICONDUCTOR a-Si:H/a-SiN_x:H MULTILAYER FILMS

STUDIES ON STRESS CHANGES WITH ANNEALING TEMPERATURE FOR AMORPHOUS SEMICONDUCTOR a-Si:H/a-SiN_x:H MULTILAYER FILMS
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摘要 In recent years, amorphous semiconductor multilayer films or superlattices have aroused exceeding interest. Amorphous multilayer structure has the advantage over single crystalline structure in that the materials need not be carefully selected so that the lattice constants of sequential layers are matched at their interface because of the nonperiodic structure in the amorphous case. These superlattices exhibit many novel transport and optical properties, which, therefore, may be expected to open up a new range of amorphous semiconductor research. The amorphous semiconductor
作者 王万录
机构地区 Department of Physics
出处 《Chinese Science Bulletin》 SCIE EI CAS 1988年第10期827-831,共5页
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