摘要
The emergence of two-dimensional(2 D) materials has inspired academia in microelectronics to find a novel device structure to offer a potential technological route for increasing energy efficiency and processing speed for data storage and computing at transistor level. Devices based on 2 D materials include logic gates and memories, each with their own unique features. However, integrating logic function and memory into a single device has barely been studied. Here, we report a non-volatile AND gate based on Al2O3/HfO2/Al2O3 charge-trap stack. The device can store charges after completing logic operation. The ratio of high and low current states during logic operations can exceed 105. The output current states during the logic and memory operations still have a two orders of magnitude distinction after 800 s, indicating that this device possesses the non-volatile characteristic. The device has potential applications for insitu memory applications, which makes it a possible candidate to break the ‘‘memory wall' at transistor level.
The emergence of two-dimensional（2 D） materials has inspired academia in microelectronics to find a novel device structure to offer a potential technological route for increasing energy efficiency and processing speed for data storage and computing at transistor level. Devices based on 2 D materials include logic gates and memories, each with their own unique features. However, integrating logic function and memory into a single device has barely been studied. Here, we report a non-volatile AND gate based on Al2O3/HfO2/Al2O3 charge-trap stack. The device can store charges after completing logic operation. The ratio of high and low current states during logic operations can exceed 105. The output current states during the logic and memory operations still have a two orders of magnitude distinction after 800 s, indicating that this device possesses the non-volatile characteristic. The device has potential applications for insitu memory applications, which makes it a possible candidate to break the ‘‘memory wall" at transistor level.
基金
supported by the National Natural Science Foundation of China(61622401,61851402 and 61734003)
National Key Research and Development Program(2017YFB0405600)
Shanghai Education Development Foundation and Shanghai Municipal Education Commission Shuguang Program(18SG01)
P.Z.also acknowledges the support from Shanghai Municipal Science and Technology Commission(18JC1410300)
