利用二极管V_F值与结温的关系评估大功率半导体器件的固晶可靠性

Using the relationship forward voltage of diode and the junction temperature is used to evaluate the die bonding reliability of high power semiconductor devices

大功率半导体器件的散热性能直接影响其可靠性,功率芯片固晶一般采用焊锡焊接提高散热性能。本文通过测试二极管的伏安特性与结温的关系,重点研究温度对PN结的影响,此影响主要表现为随着温度的升高,二极管的正向导通压降VF会线性减小,利用此特性来评估大功率半导体器件封装工艺中固晶可靠性。

The thermal performance of high power semiconductor devices directly its reliability, the die bonding of power devices use solder welding to improve the heat dissipating property. In this paper, testing the relationship between the volt ampere characteristic and junction temperature of the diode, to study the effect of temperature on PN junction. The influence mainly is with the increase of temperature, the forward voltage drop of the diode decreases linearly. Use this feature to evaluate the die bonding reliability of packaging technology for high power semiconductor devices.