摘要
利用二次离子质谱和扩展电阻探针技术测量了硅中注入硼的深度分布 .在适当的测量深度 ,用扩展电阻探针技术测得的结果对二次离子质谱技术测量的结果进行了标定 ,从而得到硅片中硼原子的深度分布 .用近似模型估算了扩展电阻探针针尖半径对测试分辨率的影响 .若探针针尖半径为r0 ,测量斜面的角度为 ξ ,在用扩展电阻探针技术测量载流子浓度的深度分布时 ,可以近似认为深度分辨率为 7 86r0 sinξ.还定性讨论了样品表面耗尽层对扩展电阻探针技术的影响 .
The dopant profiles in silicon sample implanted by BF 2 are measured using secondary ion mass spectrometry (SIMS) and spreading resistance probe (SRP) techniques.Comparing with the results measured by SIMS and SRP at a suitable depth,the calibration constant of SIMS for boron dopant is got,then the depth profile of boron atoms in silicon are determined.Using a simple model,the work estimated the effect of probe radius on resolution of SRP technique.If the probe radius is r 0,the bevel angle of sample is ξ,then the depth resolution of SRP is about 7.86r 0sinξ.The effect of surface depletion layer of samples on the resolution of SRP is also disscussed.
